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| 1SS380 Diodes Switching diode 1SS380 !Applications Low leakage switching !External dimensions (Units : mm) CATHODE MARK 0.30.05 0.1 +0.1 -0.05 1.70.1 !Construction Silicon epitaxial planar 0.7 1.250.1 Model identification label 2.50.2 !Features 1) Small surface mounting type. (UMD2) 2) Ultra low IR. (IR=40pA Typ.) 3) High reliability. +0.2 -0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 40 35 225 100 400 125 -55~+125 Unit V V mA mA mA C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min. - - - Typ. - - - Max. 1.2 10 5.0 Unit V nA pF IF =100mA VR =20V Conditons VR=0.5V, f=1MHz 1SS380 Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 5 f=1MHz 4 1 FORWARD CURRENT : IF (A) 100n REVERSE CURRENT : IR (A) 125C 100m 10n 85C 3 10m 1n 25C 2 1m 75 C 25 C -25 C 100p 1 100 20 10p 2p 0 0.5 1.0 0 50 100 0 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics FORWARD SURGE CURRENT : Isurge (A) REVERSE RECOVERY TIME : trr (nsec) 100 VR=6V, Irr=0.1IR 80 Ta=25C NON * REPETITIVE FORWARD SURGE CURRENT IF (A) Io CURRENT (%) 100 80 60 40 20 20 PULSE WIDTH P=50% 60 40 10 20 0 0 10 20 30 0 0.02 0.1 1 10 100 1000 0 0 25 50 75 100 125 FORWARD CURRENT : IF (A) PULSE WIDTH : TW (ms) AMBIENT TEMPERATURE : Ta (C) Fig. 4 Reverse recovery time characteristics Fig. 5 Surge current characteristics Fig. 6 Derating curve (mounting on glass epoxy PCBs) |
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